Vishay 45 V 10 A Diode Schottky 2-Pin TO-220F
- RS庫存編號:
- 762-0169
- 製造零件編號:
- VFT1045BP-M3/4W
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 件)*
TWD35.00
(不含稅)
TWD36.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2 件準備從其他地點送貨
- 加上 20 件從 2026年4月28日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 12 | TWD35.00 |
| 13 - 24 | TWD34.00 |
| 25 + | TWD33.00 |
* 參考價格
- RS庫存編號:
- 762-0169
- 製造零件編號:
- VFT1045BP-M3/4W
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220F | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 45V | |
| Series | VFX | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 640mV | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 15mA | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.24mm | |
| Length | 10.26mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220F | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 45V | ||
Series VFX | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 640mV | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 15mA | ||
Maximum Operating Temperature 150°C | ||
Height 15.24mm | ||
Length 10.26mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
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