Vishay 650 V 12 A Rectifier & Schottky Diode Trench MOS Schottky 3-Pin SMPD 2L VS-3C12ED07T-M3/I
- RS庫存編號:
- 279-9460
- 製造零件編號:
- VS-3C12ED07T-M3/I
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 2000 件）*
TWD190,400.00
(不含稅)
TWD199,920.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 + | TWD95.20 | TWD190,400.00 |
* 參考價格
- RS庫存編號:
- 279-9460
- 製造零件編號:
- VS-3C12ED07T-M3/I
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface | |
| Package Type | SMPD 2L | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | eSMP | |
| Diode Configuration | Single | |
| Rectifier Type | Trench MOS Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.5V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 83A | |
| Peak Reverse Current Ir | 65μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, UL 94 V-0, AEC-Q101, JESD 201 Class 2 whisker test | |
| Length | 9.4mm | |
| Height | 1.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface | ||
Package Type SMPD 2L | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series eSMP | ||
Diode Configuration Single | ||
Rectifier Type Trench MOS Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.5V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 83A | ||
Peak Reverse Current Ir 65μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, UL 94 V-0, AEC-Q101, JESD 201 Class 2 whisker test | ||
Length 9.4mm | ||
Height 1.7mm | ||
Automotive Standard No | ||
The Vishay 650 V power SiC Gen 3 merged PIN schottky diode. It comes with improved VF and efficiency by thin wafer technology. Majority carrier diode using Schottky technology on SiC wide band gap material.
RoHS compliant
Halogen free
UL 94 V-0 flammability rating
Very low profile
Temperature invariant switching behaviour
相關連結
- Vishay 650 V 12 A Rectifier & Schottky Diode Trench MOS Schottky 3-Pin SMPD 2L VS-3C12ED07T-M3/I
- Vishay 650 V 16 A Rectifier & Schottky Diode Trench MOS Schottky 3-Pin TO-220AC 2L VS-3C16ET07T-M3
- Vishay 650 V 4 A Rectifier & Schottky Diode Schottky 2-Pin SMPD 2L VS-3C04ED07T-M3/I
- Vishay 650 V 8 A Rectifier & Schottky Diode Schottky 3-Pin SMPD 2L VS-3C08ED07T-M3/I
- Vishay 650 V 6 A Rectifier & Schottky Diode Schottky 3-Pin SMPD 2L VS-3C06ED07T-M3/I
- Vishay 650 V 20 A Rectifier & Schottky Diode Schottky 3-Pin SMPD 2L VS-3C20ED07T-M3/I
- Vishay 650 V 10 A Rectifier & Schottky Diode Schottky 3-Pin SMPD 2L VS-3C10ED07T-M3/I
- Vishay 650 V 8 A Rectifier & Schottky Diode Trench MOS Schottky 3-Pin TO-247AD 3L VS-3C16CP07L-M3