Vishay 650 V 8 A Rectifier & Schottky Diode Schottky 3-Pin SMPD 2L VS-3C08ED07T-M3/I
- RS庫存編號:
- 279-9444
- 製造零件編號:
- VS-3C08ED07T-M3/I
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD102.00
(不含稅)
TWD107.10
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,988 件從 2026年4月27日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 49 | TWD102.00 |
| 50 - 99 | TWD81.00 |
| 100 - 249 | TWD69.00 |
| 250 - 999 | TWD66.00 |
| 1000 + | TWD65.00 |
* 參考價格
- RS庫存編號:
- 279-9444
- 製造零件編號:
- VS-3C08ED07T-M3/I
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | SMPD 2L | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | eSMP | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 90μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 52A | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.7mm | |
| Length | 10.2mm | |
| Standards/Approvals | JESD 201 Class 2 whisker test, RoHS and AEC-Q101 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type SMPD 2L | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series eSMP | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 90μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 52A | ||
Maximum Operating Temperature 150°C | ||
Height 1.7mm | ||
Length 10.2mm | ||
Standards/Approvals JESD 201 Class 2 whisker test, RoHS and AEC-Q101 | ||
Automotive Standard No | ||
The Vishay 650 V power SiC Gen 3 merged PIN schottky diode. It comes with improved VF and efficiency by thin wafer technology. Majority carrier diode using Schottky technology on SiC wide band gap material.
RoHS compliant
Halogen free
UL 94 V-0 flammability rating
Very low profile
Temperature invariant switching behaviour
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