STMicroelectronics 1200 V 30 A Rectifier & Schottky Diode Rectifier Diode 2-Pin DO-247 LL
- RS庫存編號:
- 275-1364P
- 製造零件編號:
- STPSC30G12WL
- 製造商:
- STMicroelectronics
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享受批量購買折扣
額外添加10件可節省1%
查看批量定價選項小計 5 件 (以管提供)*
TWD2,410.00
(不含稅)
TWD2,530.50
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 259 個，準備發貨
單位 | 每單位 | 節省 |
|---|---|---|
| 5 - 9 | TWD482.00 | - |
| 10 - 99 | TWD473.00 | 1% |
| 100 - 249 | TWD463.00 | 3% |
| 250 + | TWD455.00 | 5% |
* 參考價格
- RS庫存編號:
- 275-1364P
- 製造零件編號:
- STPSC30G12WL
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | DO-247 LL | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | STPS | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -65°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1550A | |
| Maximum Operating Temperature | 175°C | |
| Height | 41.2mm | |
| Length | 15.9mm | |
| Standards/Approvals | RoHS | |
| Width | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type DO-247 LL | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series STPS | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Minimum Operating Temperature -65°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1550A | ||
Maximum Operating Temperature 175°C | ||
Height 41.2mm | ||
Length 15.9mm | ||
Standards/Approvals RoHS | ||
Width 5.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Avalanche energy rated
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