STMicroelectronics 100 V 5 A Rectifier & Schottky Diode Rectifier Diode 3-Pin ECOPACK STPST5H100SBY-TR
- RS庫存編號:
- 273-5146
- 製造零件編號:
- STPST5H100SBY-TR
- 製造商:
- STMicroelectronics
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可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD157.00
(不含稅)
TWD164.85
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 300 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD31.40 | TWD157.00 |
| 10 - 95 | TWD28.60 | TWD143.00 |
| 100 - 245 | TWD25.60 | TWD128.00 |
| 250 - 495 | TWD23.00 | TWD115.00 |
| 500 + | TWD20.80 | TWD104.00 |
* 參考價格
- RS庫存編號:
- 273-5146
- 製造零件編號:
- STPST5H100SBY-TR
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | ECOPACK | |
| Maximum Continuous Forward Current If | 5A | |
| Peak Reverse Repetitive Voltage Vrrm | 100V | |
| Diode Configuration | Common Anode | |
| Series | STPS | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -65°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 155A | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.1mm | |
| Standards/Approvals | RoHS | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type ECOPACK | ||
Maximum Continuous Forward Current If 5A | ||
Peak Reverse Repetitive Voltage Vrrm 100V | ||
Diode Configuration Common Anode | ||
Series STPS | ||
Rectifier Type Rectifier Diode | ||
Pin Count 3 | ||
Minimum Operating Temperature -65°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 155A | ||
Maximum Operating Temperature 175°C | ||
Height 10.1mm | ||
Standards/Approvals RoHS | ||
Length 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics DPAK power schottky trench rectifier is based on ST trench technology that achieves the best-inclass VF/IR trade-off for a given silicon surface.
Low forward voltage drop
Low recovery charges
Reduces conduction, reverse and switching losses
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