STMicroelectronics 1200 V 40 A Rectifier & Schottky Diode Rectifier Diode 3-Pin TO-247
- RS庫存編號:
- 273-5109
- 製造零件編號:
- STPSC40H12CWY
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD15,381.00
(不含稅)
TWD16,150.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 300 件從 2026年4月27日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD512.70 | TWD15,381.00 |
| 60 - 60 | TWD502.50 | TWD15,075.00 |
| 90 + | TWD492.40 | TWD14,772.00 |
* 參考價格
- RS庫存編號:
- 273-5109
- 製造零件編號:
- STPSC40H12CWY
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | STPS | |
| Diode Configuration | Dual | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -65°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Maximum Operating Temperature | 175°C | |
| Height | 34.95mm | |
| Length | 15.75mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series STPS | ||
Diode Configuration Dual | ||
Rectifier Type Rectifier Diode | ||
Pin Count 3 | ||
Minimum Operating Temperature -65°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Maximum Operating Temperature 175°C | ||
Height 34.95mm | ||
Length 15.75mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics schottky silicon carbide diode available in TO-247, is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high-voltage periphery
PPAP capable
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