Infineon 4 V 110 mA Diode TSLP BAT1502ELE6327XTMA1

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小計(1 包,共 10 件)*

TWD121.00

(不含稅)

TWD127.00

(含稅)

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單位
每單位
每包*
10 - 10TWD12.10TWD121.00
20 - 90TWD11.10TWD111.00
100 - 240TWD10.30TWD103.00
250 - 490TWD8.90TWD89.00
500 +TWD8.40TWD84.00

* 參考價格

包裝方式:
RS庫存編號:
258-0637
Distrelec 貨號:
304-40-474
製造零件編號:
BAT1502ELE6327XTMA1
製造商:
Infineon
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品牌

Infineon

Product Type

Diode

Mount Type

Surface

Package Type

TSLP

Maximum Continuous Forward Current If

110mA

Peak Reverse Repetitive Voltage Vrrm

4V

Diode Configuration

Single

Series

BAT15-02EL

Maximum Forward Voltage Vf

0.41V

Peak Reverse Current Ir

5μA

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

TSLP-2-19 package with a 0402 foot print

Pb-free, RoHS compliant and halogen-free

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