Infineon 30 V 500 mA Schottky Diode Schottky 2-Pin SC-79 BAS3005A02VH6327XTSA1
- RS庫存編號:
- 249-6957
- 製造零件編號:
- BAS3005A02VH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD12,900.00
(不含稅)
TWD13,560.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 12,000 件從 2027年1月07日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD4.30 | TWD12,900.00 |
| 6000 + | TWD3.90 | TWD11,700.00 |
* 參考價格
- RS庫存編號:
- 249-6957
- 製造零件編號:
- BAS3005A02VH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Surface | |
| Product Type | Schottky Diode | |
| Package Type | SC-79 | |
| Maximum Continuous Forward Current If | 500mA | |
| Peak Reverse Repetitive Voltage Vrrm | 30V | |
| Series | BAS3005A | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 300μA | |
| Maximum Forward Voltage Vf | 0.45V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 5A | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Surface | ||
Product Type Schottky Diode | ||
Package Type SC-79 | ||
Maximum Continuous Forward Current If 500mA | ||
Peak Reverse Repetitive Voltage Vrrm 30V | ||
Series BAS3005A | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 300μA | ||
Maximum Forward Voltage Vf 0.45V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 5A | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
Infineon BAS3005A Series Schottky Diode, 30V Peak Reverse Repetitive Voltage, 500mA Max Continuous Forward Current - BAS3005A02VH6327XTSA1
This Schottky diode is a single-junction rectifier designed for fast switching and general-purpose protection in surface-mounted electronic systems. It operates over a broad temperature range suitable for demanding environments and meets an automotive-level quality standard for component stress screening.
Features and Benefits:
• Low forward voltage reduces conduction losses during operation
• Handles 500 mA continuous forward current for steady loads
• Withstands 30 V reverse repetitive voltage for moderate-voltage circuits
• Peak forward surge capacity of 5 A protects against short transients
• Peak reverse leakage of 300 μA limits standby current draw
• Rated for −55 to 125 °C operation for wide thermal tolerance
• Handles 500 mA continuous forward current for steady loads
• Withstands 30 V reverse repetitive voltage for moderate-voltage circuits
• Peak forward surge capacity of 5 A protects against short transients
• Peak reverse leakage of 300 μA limits standby current draw
• Rated for −55 to 125 °C operation for wide thermal tolerance
Applications
• Suitable for power-rail protection in automotive electronics
• Ideal for high-speed switching in signal conditioning
• Used with Compact surface assemblies requiring SC-79 package
• Can be used for polarity protection on low-voltage boards
• Suitable for circuits needing low Vf rectification under 500 mA
• Ideal for high-speed switching in signal conditioning
• Used with Compact surface assemblies requiring SC-79 package
• Can be used for polarity protection on low-voltage boards
• Suitable for circuits needing low Vf rectification under 500 mA
What mounting style does it require?
It is configured for surface-mount placement in an SC-79 package.
How does it perform under short-duration overloads?
It tolerates a non-repetitive forward surge current of 5 A for transient events.
What operating temperatures can it endure?
It is specified to function from −55 °C up to 125 °C.
Is it suitable for automotive-grade applications?
It conforms to an automotive-focused AEC‑Q101 qualification for component screening.
What is the expected reverse leakage at rated conditions?
The device exhibits a Peak reverse current of 300 μA under specified reverse stress.
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