Infineon 1.2 kV 5 A Diode Schottky 2-Pin DPAK IDM05G120C5XTMA1
- RS庫存編號:
- 222-4829
- 製造零件編號:
- IDM05G120C5XTMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計(1 包,共 5 件)*
TWD637.00
(不含稅)
TWD668.85
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年10月13日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD127.40 | TWD637.00 |
| 10 - 95 | TWD124.40 | TWD622.00 |
| 100 - 245 | TWD121.00 | TWD605.00 |
| 250 - 495 | TWD118.40 | TWD592.00 |
| 500 + | TWD115.20 | TWD576.00 |
* 參考價格
- RS庫存編號:
- 222-4829
- 製造零件編號:
- IDM05G120C5XTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Diode | |
| Mount Type | SMD | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 5A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | 5th Generation thinQ!TM 1200 V SiC Schottky Diode IDM05G120C5 | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.95V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Width | 2.35mm | |
| Length | 6.65mm | |
| Height | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Diode | ||
Mount Type SMD | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 5A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series 5th Generation thinQ!TM 1200 V SiC Schottky Diode IDM05G120C5 | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.95V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Width 2.35mm | ||
Length 6.65mm | ||
Height 10.4mm | ||
Automotive Standard No | ||
Infineon 5th Generation thinQ!TM 1200 V SiC Schottky Diode IDM05G120C5 Series Diode, 5A Continuous Forward Current, 1200V Peak Reverse Repetitive Voltage - IDM05G120C5XTMA1
This diode is a silicon carbide Schottky rectifier designed for high-voltage switching and power conversion tasks. It operates reliably across an extended temperature span and is supplied in a surface-mount TO-252 package suited to Compact board layouts. The device supports medium-current rectification and is engineered to meet industry thermal and handling standards.
Features and Benefits:
• 1200V Peak reverse voltage for high-voltage blocking capability
• 5A continuous forward current for steady medium-power throughput
• Maximum forward voltage Vf 1.95V reduces conduction losses
• Operating range -55°C to 175°C for wide thermal tolerance
• Surface-mount TO-252 package for straightforward PCB mounting
• 5A continuous forward current for steady medium-power throughput
• Maximum forward voltage Vf 1.95V reduces conduction losses
• Operating range -55°C to 175°C for wide thermal tolerance
• Surface-mount TO-252 package for straightforward PCB mounting
Applications
• Suitable for high-voltage DC-link rectification in converters
• Ideal for power-supply freewheeling and reverse-recovery reduction
• Used for medium-power motor-drive snubber circuits
• Can be used for isolated power modules requiring Compact mounting
• Ideal for power-supply freewheeling and reverse-recovery reduction
• Used for medium-power motor-drive snubber circuits
• Can be used for isolated power modules requiring Compact mounting
What approvals support manufacturing and handling reliability?
It is approved to J-STD-020 and JESD22 standards for thermal and mechanical robustness.
What is the device pin configuration and count?
The component is a two-pin Schottky diode in a package designed for surface mounting.
How does the package influence board-level design?
The TO-252 surface package provides a Compact footprint and a thermal path suitable for heat dissipation on copper planes.
What rectifier type and semiconductor material are used?
The device is a Schottky rectifier fabricated from silicon carbide for fast switching and low reverse recovery.
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