STMicroelectronics 1200 V 10 A Diode 2-Pin D2PAK

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TWD179,500.00

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TWD188,480.00

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RS庫存編號:
219-4233
製造零件編號:
STPSC10H12G2Y-TR
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

Diode

Mount Type

Surface

Package Type

TO-263

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Series

STPSC10H12G2Y-TR

Pin Count

2

Peak Non-Repetitive Forward Surge Current Ifsm

60A

Maximum Forward Voltage Vf

2.25V

Peak Reverse Current Ir

30μA

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

4.3mm

Length

15.95mm

Automotive Standard

No

The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

AEC-Q101 qualified

No or negligible reverse recovery

Switching behaviour independent of temperature

Robust high voltage periphery

PPAP capable

Operating Tj from -40 °C to 175 °C

Low VF

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