STMicroelectronics 1200 V 10 A Diode 2-Pin D2PAK

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TWD155,400.00

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TWD163,170.00

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RS庫存編號:
219-4231
製造零件編號:
STPSC10H12G2-TR
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Mount Type

Surface

Product Type

Diode

Package Type

TO-263

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Pin Count

2

Peak Non-Repetitive Forward Surge Current Ifsm

60A

Maximum Forward Voltage Vf

2.25V

Minimum Operating Temperature

-40°C

Peak Reverse Current Ir

30μA

Maximum Operating Temperature

175°C

Height

4.3mm

Standards/Approvals

RoHS

Length

15.4mm

Automotive Standard

No

The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

No or negligible reverse recovery

Switching behaviour independent of temperature

Robust high voltage periphery

Operating Tj from -40 °C to 175 °C

Low VF

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

ECOPACK2 compliant

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