Infineon 650 V 10 A Diode Schottky 10-Pin HDSOP IDDD10G65C6XTMA1
- RS庫存編號:
- 216-8371
- 製造零件編號:
- IDDD10G65C6XTMA1
- 製造商:
- Infineon
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- RS庫存編號:
- 216-8371
- 製造零件編號:
- IDDD10G65C6XTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | HDSOP | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDDD10G65C6 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 10 | |
| Maximum Forward Voltage Vf | 1.25V | |
| Peak Reverse Current Ir | 77μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 600A | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.6mm | |
| Height | 2.35mm | |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type HDSOP | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDDD10G65C6 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 10 | ||
Maximum Forward Voltage Vf 1.25V | ||
Peak Reverse Current Ir 77μA | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 600A | ||
Maximum Operating Temperature 175°C | ||
Length 6.6mm | ||
Height 2.35mm | ||
Standards/Approvals JEDEC (J-STD20 and JESD22) | ||
Automotive Standard No | ||
The Infineon IDD series schottky diode introduces double DPAK (DDPAK), the first top-side cooled surface mount device package addressing high power SMPS applications such as PC power, solar, server and telecom. It has current rating of 10 A. It provides a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves efficiency and ease-of-use
Enables higher power density solutions
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