STMicroelectronics 650 V 4 A Diode 2-Pin D2PAK STPSC4H065B-TR
- RS庫存編號:
- 201-0882
- 製造零件編號:
- STPSC4H065B-TR
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 包，共 10 件）*
TWD468.00
(不含稅)
TWD491.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月27日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | TWD46.80 | TWD468.00 |
| 630 - 1240 | TWD45.60 | TWD456.00 |
| 1250 + | TWD45.00 | TWD450.00 |
* 參考價格
- RS庫存編號:
- 201-0882
- 製造零件編號:
- STPSC4H065B-TR
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Reverse Current Ir | 35μA | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Maximum Operating Temperature | 175°C | |
| Length | 28.25mm | |
| Standards/Approvals | No | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Reverse Current Ir 35μA | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Maximum Operating Temperature 175°C | ||
Length 28.25mm | ||
Standards/Approvals No | ||
Height 4.5mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
No reverse recovery charge in application current range
Switching behavior independent of temperature
High forward surge capability
Power efficient product
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