onsemi 30 V 20 A Schottky Barrier Rectifier Schottky 3-Pin TO-220 MBR2030CTLG
- RS庫存編號:
- 186-7802
- 製造零件編號:
- MBR2030CTLG
- 製造商:
- onsemi
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額外添加15件可節省TWD45.00
查看批量定價選項小計（1 包，共 5 件）*
TWD605.00
(不含稅)
TWD635.25
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 75 個，準備發貨
單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 5 - 10 | TWD121.00 | TWD605.00 | - |
| 15 - 20 | TWD118.00 | TWD590.00 | TWD45.00 |
| 25 + | TWD116.60 | TWD583.00 | TWD110.00 |
* 參考價格
- RS庫存編號:
- 186-7802
- 製造零件編號:
- MBR2030CTLG
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Schottky Barrier Rectifier | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 30V | |
| Series | MBR2030 | |
| Diode Configuration | 2x Common Cathode Pair | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | 65°C | |
| Maximum Forward Voltage Vf | 400mV | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 150A | |
| Peak Reverse Current Ir | 75mA | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.75mm | |
| Standards/Approvals | RoHS, UL 94 V-0 | |
| Width | 10.53mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Mount Type Through Hole | ||
Product Type Schottky Barrier Rectifier | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 30V | ||
Series MBR2030 | ||
Diode Configuration 2x Common Cathode Pair | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature 65°C | ||
Maximum Forward Voltage Vf 400mV | ||
Peak Non-Repetitive Forward Surge Current Ifsm 150A | ||
Peak Reverse Current Ir 75mA | ||
Maximum Operating Temperature 175°C | ||
Height 15.75mm | ||
Standards/Approvals RoHS, UL 94 V-0 | ||
Width 10.53mm | ||
Automotive Standard AEC-Q101 | ||
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
150°C Operating Junction Temperature
Matched Dual Die Construction (10 A per Leg or 20 A per Package)
High Junction Temperature Capability
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Mechanical Characteristics:
Case: Epoxy, Moulded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily solder able
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
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