Vishay 30 V 200 mA Diode Small Signal 2-Pin DO-35 SD103B-TR
- RS庫存編號:
- 180-7138
- 製造零件編號:
- SD103B-TR
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 100 件）*
TWD290.00
(不含稅)
TWD304.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 加上 300 件從 2026年6月12日 起發貨
- 最終 15,600 件從 2026年6月19日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 100 - 2400 | TWD2.90 | TWD290.00 |
| 2500 - 4900 | TWD2.80 | TWD280.00 |
| 5000 + | TWD2.80 | TWD280.00 |
* 參考價格
- RS庫存編號:
- 180-7138
- 製造零件編號:
- SD103B-TR
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | DO-35 | |
| Maximum Continuous Forward Current If | 200mA | |
| Peak Reverse Repetitive Voltage Vrrm | 30V | |
| Diode Configuration | Single | |
| Rectifier Type | Small Signal | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 15A | |
| Maximum Forward Voltage Vf | 600mV | |
| Peak Reverse Current Ir | 5μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Recovery Time trr | 10ns | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Length | 55.9mm | |
| Height | 3.9mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type DO-35 | ||
Maximum Continuous Forward Current If 200mA | ||
Peak Reverse Repetitive Voltage Vrrm 30V | ||
Diode Configuration Single | ||
Rectifier Type Small Signal | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 15A | ||
Maximum Forward Voltage Vf 600mV | ||
Peak Reverse Current Ir 5μA | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Recovery Time trr 10ns | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Length 55.9mm | ||
Height 3.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring
The low forward voltage drop and fast switching make it Ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications
Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems
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