Vishay 120 V 20 A Diode Schottky 3-Pin TO-220AB V20120S-E3/4W
- RS庫存編號:
- 145-1729
- 製造零件編號:
- V20120S-E3/4W
- 製造商:
- Vishay
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- RS庫存編號:
- 145-1729
- 製造零件編號:
- V20120S-E3/4W
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220AB | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 120V | |
| Series | V20 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.12V | |
| Peak Reverse Current Ir | 30mA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.32mm | |
| Width | 4.7mm | |
| Standards/Approvals | No | |
| Diameter | 10.54mm | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220AB | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 120V | ||
Series V20 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.12V | ||
Peak Reverse Current Ir 30mA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 15.32mm | ||
Width 4.7mm | ||
Standards/Approvals No | ||
Diameter 10.54mm | ||
Length 10.54mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over Planar Schottky rectifiers. At operating voltages of 45V and above Planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
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