ROHM 200 V 3 A Diode Schottky 3-Pin TO-277A RB058RSM20STFTL1
- RS庫存編號:
- 780-389
- 製造零件編號:
- RB058RSM20STFTL1
- 製造商:
- ROHM
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TWD420.00
(不含稅)
TWD441.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 100 件從 2026年9月14日 起發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | TWD42.00 | TWD420.00 |
| 100 - 490 | TWD26.00 | TWD260.00 |
| 500 + | TWD14.90 | TWD149.00 |
* 參考價格
- RS庫存編號:
- 780-389
- 製造零件編號:
- RB058RSM20STFTL1
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-277A | |
| Maximum Continuous Forward Current If | 3A | |
| Peak Reverse Repetitive Voltage Vrrm | 200V | |
| Series | RB058 | |
| Diode Configuration | Schottky | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 1.1A | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 55A | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Width | 4.75mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 6.65mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-277A | ||
Maximum Continuous Forward Current If 3A | ||
Peak Reverse Repetitive Voltage Vrrm 200V | ||
Series RB058 | ||
Diode Configuration Schottky | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 1.1A | ||
Peak Non-Repetitive Forward Surge Current Ifsm 55A | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Width 4.75mm | ||
Standards/Approvals RoHS Compliant | ||
Length 6.65mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Schottky Barrier Diode delivers high-performance rectification for automotive and industrial power management. This robust device is engineered for high-efficiency switching power supplies, ensuring stable operation in demanding thermal environments up to 175°C.
Repetitive Peak reverse voltage of 200 V
Average rectified forward current of 3 A
Ultra-low reverse current silicon epitaxial Planar structure
High thermal stability up to 175°C
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