BGAP2S30AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 35 dB, 16-Pin 4200 MHz TSNP-16

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TWD262.00

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TWD275.10

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RS庫存編號:
349-420
製造零件編號:
BGAP2S30AE6327XTSA1
製造商:
Infineon
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品牌

Infineon

Product Type

Pre-Driver for Wireless Infrastructure Applications

Operating Frequency

4200 MHz

Technology

BiCMOS

Gain

35dB

Minimum Supply Voltage

4.75V

Package Type

TSNP-16

Maximum Supply Voltage

5.5V

Pin Count

16

Noise Figure

3.7dB

Third Order Intercept OIP3

34.1dBm

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

115°C

Standards/Approvals

RoHS, JEDEC47/20/22

Height

8mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon 3.3 to 4.2 GHz mid band driver amplifier that can be used as pre driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω.

BiCMOS technology for an optimized performance

High gain and high power for fewer components in line up

Internal matching and saving external matching components

Easy design in and small area footprint

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