Toshiba TPD2005F(EL,F) High Side 8, High Side Power Switch Power Switch IC 24-Pin, SSOP
- RS庫存編號:
- 760-3271
- 製造零件編號:
- TPD2005F(EL,F)
- 製造商:
- Toshiba
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TWD152.00
(不含稅)
TWD159.60
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 114 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 124 | TWD152.00 |
| 125 - 249 | TWD150.00 |
| 250 + | TWD148.00 |
* 參考價格
- RS庫存編號:
- 760-3271
- 製造零件編號:
- TPD2005F(EL,F)
- 製造商:
- Toshiba
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Power Switch Topology | High Side | |
| Power Switch Type | High Side Power Switch | |
| Product Type | Power Switch IC | |
| Switch On Resistance RdsOn | 1.2Ω | |
| Number of Outputs | 8 | |
| Number of Inputs | 8 | |
| Power Rating | 1.2W | |
| Mount Type | Surface | |
| Package Type | SSOP | |
| Maximum Supply Voltage | 40V | |
| Pin Count | 24 | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | -40°C | |
| Width | 6mm | |
| Length | 13.5mm | |
| Standards/Approvals | No | |
| Height | 1.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Power Switch Topology High Side | ||
Power Switch Type High Side Power Switch | ||
Product Type Power Switch IC | ||
Switch On Resistance RdsOn 1.2Ω | ||
Number of Outputs 8 | ||
Number of Inputs 8 | ||
Power Rating 1.2W | ||
Mount Type Surface | ||
Package Type SSOP | ||
Maximum Supply Voltage 40V | ||
Pin Count 24 | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature -40°C | ||
Width 6mm | ||
Length 13.5mm | ||
Standards/Approvals No | ||
Height 1.4mm | ||
Automotive Standard No | ||
Intelligent Power Devices (IPDs), Toshiba
The TPD1030F is a 2-in-1 Low-Side Switch
The TPD2005F is an 8-channel High-Side Switch Array
The TPD2007F is an 8-channel Low-Side Switch Array
Switching applications for Motors, Solenoids, and Lamp Drivers
Power and Load Switches, Toshiba
Integrated High-side and Low-side Intelligent Power Switching circuits incorporating many functional and protective features such as over-current, over-voltage, short-circuit, open-circuit load, over-temperature and supply reversal. These highly integrated devices utilise low on-resistance MOSFET transistors to minimise power losses and maintain high efficiency.
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