Infineon EVAL-1ED3142MU12F-SIC IGBT, MOSFET Driver for Gate Driver IC for MOSFET
- RS庫存編號:
- 273-2063
- 製造零件編號:
- EVAL1ED3142MU12FSICTOBO1
- 製造商:
- Infineon
單價 個**
TWD3,390.00
(不含稅)
TWD3,559.50
(含稅)
1 現貨庫存,可於6工作日發貨。*
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 TWD2,857.00 (未稅) 即可享受 免費 送貨服務
單位 | 每單位 |
---|---|
1 + | TWD3,390.00 |
** 參考價格
- RS庫存編號:
- 273-2063
- 製造零件編號:
- EVAL1ED3142MU12FSICTOBO1
- 製造商:
- Infineon
Evaluation board for 1ED3142MU12F - 2300 V, 6.5 A, 3 kV (rms) single-channel isolated gate driver
The EVAL-1ED3142MU12F-SIC is in half-bridge configuration with two gate driver ICs (1ED3142MU12F) to drive power switches such as IGBTs, MOSFETs and SiC MOSFETs.
This board comes pre-populated with two CoolSiC™ MOSFET IMZA120R020M1H, an additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side, fast operational amplifier is used as comparator for over-current detection. It is best suited for double-pulse testing.
1ED3142MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 compact family). 1ED3142MU12F offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe power transistor off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.
This board comes pre-populated with two CoolSiC™ MOSFET IMZA120R020M1H, an additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side, fast operational amplifier is used as comparator for over-current detection. It is best suited for double-pulse testing.
1ED3142MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 compact family). 1ED3142MU12F offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe power transistor off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.
Evaluation board for 1ED3142MU12F - 2300 V, 6.5 A, 3 kV (rms) single-channel isolated gate driver
•EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 compact family)
•For use with 650 V/1200 V/1700 V/2300 V/ IGBTs, Si and SiC MOSFETs
•2300 V functional offset voltage capable for selected applications
•Galvanically isolated coreless transformer gate driver
•6.5 A typical sinking and sourcing peak output current
•35 V absolute maximum output supply voltage
•45 ns propagation delay with 20 ns input filter
•High common-mode transient immunity CMTI >300 kV/μs
•Separate source and sink outputs
•Short-circuit clamping and active shutdown
•DSO-8 150 mil narrow-body package
•For use with 650 V/1200 V/1700 V/2300 V/ IGBTs, Si and SiC MOSFETs
•2300 V functional offset voltage capable for selected applications
•Galvanically isolated coreless transformer gate driver
•6.5 A typical sinking and sourcing peak output current
•35 V absolute maximum output supply voltage
•45 ns propagation delay with 20 ns input filter
•High common-mode transient immunity CMTI >300 kV/μs
•Separate source and sink outputs
•Short-circuit clamping and active shutdown
•DSO-8 150 mil narrow-body package
Benefits
•Integrated filters reduce the need of external filters
•Tight IC-to-IC propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature
•Suitable for operation at high ambient temperature and in fast switching applications
•UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min
•Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
•The precise threshold and timings, combined with UL 1577 certification enable superior application safety
•Tight IC-to-IC propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature
•Suitable for operation at high ambient temperature and in fast switching applications
•UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min
•Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
•The precise threshold and timings, combined with UL 1577 certification enable superior application safety
Applications
•EV charging
•Motor control and drives
•Photovoltaic
•Server power supplies
•Uninterruptible power supplies (UPS)
•Motor control and drives
•Photovoltaic
•Server power supplies
•Uninterruptible power supplies (UPS)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
屬性 | 值 |
---|---|
Power Management Function | IGBT, MOSFET Driver |
For Use With | MOSFET |
Kit Classification | Evaluation Board |
Featured Device | Gate Driver IC |
Kit Name | EVAL-1ED3142MU12F-SIC |