Renesas Electronics PS2562L1-1-A DC Input Photocoupler, Surface, 4-Pin DIP
- RS庫存編號:
- 234-7079
- 製造零件編號:
- PS2562L1-1-A
- 製造商:
- Renesas Electronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 100 件）*
TWD1,970.00
(不含稅)
TWD2,068.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 100 件從 2026年7月03日 起裝運發貨
- 加上 200 件從 2026年7月31日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 100 - 100 | TWD19.70 | TWD1,970.00 |
| 200 - 400 | TWD19.10 | TWD1,910.00 |
| 500 - 900 | TWD18.60 | TWD1,860.00 |
| 1000 - 1900 | TWD18.00 | TWD1,800.00 |
| 2000 + | TWD17.40 | TWD1,740.00 |
* 參考價格
- RS庫存編號:
- 234-7079
- 製造零件編號:
- PS2562L1-1-A
- 製造商:
- Renesas Electronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Renesas Electronics | |
| Product Type | Photocoupler | |
| Mount Type | Surface | |
| Maximum Forward Voltage | 1.4V | |
| Packaging | Magazine | |
| Number of Channels | 1 | |
| Number of Pins | 4 | |
| Package Type | DIP | |
| Input Current Type | DC | |
| Typical Rise Time | 100μs | |
| Maximum Input Current | 400mA | |
| Isolation Voltage | 5000V | |
| Minimum Operating Temperature | -55°C | |
| Logic Output | Yes | |
| Maximum Current Transfer Ratio | 2000% | |
| Maximum Operating Temperature | 100°C | |
| Typical Fall Time | 100μs | |
| Standards/Approvals | UL | |
| Series | PS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Renesas Electronics | ||
Product Type Photocoupler | ||
Mount Type Surface | ||
Maximum Forward Voltage 1.4V | ||
Packaging Magazine | ||
Number of Channels 1 | ||
Number of Pins 4 | ||
Package Type DIP | ||
Input Current Type DC | ||
Typical Rise Time 100μs | ||
Maximum Input Current 400mA | ||
Isolation Voltage 5000V | ||
Minimum Operating Temperature -55°C | ||
Logic Output Yes | ||
Maximum Current Transfer Ratio 2000% | ||
Maximum Operating Temperature 100°C | ||
Typical Fall Time 100μs | ||
Standards/Approvals UL | ||
Series PS | ||
Automotive Standard No | ||
The Renesas Electronics optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. It has high isolation voltage.
High collector to emitter voltage
High current transfer ratio
High-speed switching
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