The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation Current Transfer Ratio In Select Groups Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M) Applications AC-DC Merchant Power Supply Consumer Appliances Industrial Motor
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