DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin
- RS庫存編號:
- 922-7888
- 製造零件編號:
- ZXMHC6A07T8TA
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD42,300.00
(不含稅)
TWD44,420.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,000 件從 2026年3月24日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | TWD42.30 | TWD42,300.00 |
| 5000 + | TWD41.50 | TWD41,500.00 |
* 參考價格
- RS庫存編號:
- 922-7888
- 製造零件編號:
- ZXMHC6A07T8TA
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 425mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.85V | |
| Typical Gate Charge Qg @ Vgs | 3.2nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Full Bridge | |
| Standards/Approvals | J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0 | |
| Length | 6.7mm | |
| Height | 1.6mm | |
| Width | 3.7 mm | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 425mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.85V | ||
Typical Gate Charge Qg @ Vgs 3.2nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Full Bridge | ||
Standards/Approvals J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0 | ||
Length 6.7mm | ||
Height 1.6mm | ||
Width 3.7 mm | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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