IXYS X2-Class Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-220 IXTP4N65X2

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包裝方式:
RS庫存編號:
917-1485
製造零件編號:
IXTP4N65X2
製造商:
IXYS
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品牌

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Series

X2-Class

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

850mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

80W

Typical Gate Charge Qg @ Vgs

8.3nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

4.7mm

Width

15.9 mm

Standards/Approvals

No

Length

10.3mm

Automotive Standard

No

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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