IXYS Single X2-Class 1 Type N, Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-247 IXTH12N65X2

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包裝方式:
RS庫存編號:
917-1457
製造零件編號:
IXTH12N65X2
製造商:
IXYS
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品牌

IXYS

Channel Type

Type N, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

X2-Class

Mount Type

Through Hole, Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

17.7nC

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

180W

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

No

Height

5.3mm

Length

16.24mm

Number of Elements per Chip

1

Automotive Standard

No

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS