IXYS Single X2-Class 1 N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-247 IXTH12N65X2
- RS庫存編號:
- 917-1457
- 製造零件編號:
- IXTH12N65X2
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
- RS庫存編號:
- 917-1457
- 製造零件編號:
- IXTH12N65X2
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Transistor Configuration | Single | |
| Series | X2-Class | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 12 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-247 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.4 V | |
| Height | 5.3 mm | |
| Length | 16.24 mm | |
| Maximum Drain Source Resistance (Rds) | 300 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -30 V, +30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 180 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 17.7 nC | |
| Width | 21.45 mm | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Transistor Configuration Single | ||
Series X2-Class | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 12 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-247 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.4 V | ||
Height 5.3 mm | ||
Length 16.24 mm | ||
Maximum Drain Source Resistance (Rds) 300 mΩ | ||
Maximum Gate Source Voltage (Vgs) -30 V, +30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 180 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 17.7 nC | ||
Width 21.45 mm | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
相關連結
- IXYS Single X2-Class 1 N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH12N65X2
- IXYS X2-Class N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH62N65X2
- IXYS X2-Class N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH80N65X2
- IXYS X2-Class N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH34N65X2
- IXYS X2-Class N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH48N65X2
- IXYS HiperFET 46 A 3-Pin TO-247 IXFH46N65X2
- IXYS HiperFET 34 A 3-Pin TO-247 IXFH34N65X2
- IXYS X2-Class N-Channel MOSFET 650 V Enhancement, 3-Pin ISOPLUS247 IXTR102N65X2