IXYS X2-Class Type N-Channel Power MOSFET, 102 A, 650 V Enhancement, 3-Pin TO-264P IXTK102N65X2

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 件)*

TWD598.00

(不含稅)

TWD627.90

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法存取 - 請稍後再回來查看
單位
每單位
1 - 6TWD598.00
7 - 12TWD582.00
13 +TWD574.00

* 參考價格

包裝方式:
RS庫存編號:
917-1423
Distrelec 貨號:
302-53-426
製造零件編號:
IXTK102N65X2
製造商:
IXYS
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

IXYS

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

102A

Maximum Drain Source Voltage Vds

650V

Series

X2-Class

Package Type

TO-264P

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

152nC

Maximum Power Dissipation Pd

1040W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

26.3 mm

Length

20.3mm

Height

5.3mm

Standards/Approvals

International Standard Packages

Automotive Standard

No

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

相關連結