onsemi PowerTrench Type P-Channel MOSFET, 8.8 A, 30 V Enhancement, 8-Pin SOIC SI4435DY
- RS庫存編號:
- 903-4412
- 製造零件編號:
- SI4435DY
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD263.00
(不含稅)
TWD276.20
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 20 件準備從其他地點送貨
- 最終 3,980 件從 2026年1月13日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | TWD26.30 | TWD263.00 |
| 630 - 1240 | TWD25.90 | TWD259.00 |
| 1250 + | TWD25.20 | TWD252.00 |
* 參考價格
- RS庫存編號:
- 903-4412
- 製造零件編號:
- SI4435DY
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Solder | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 4.9mm | |
| Standards/Approvals | No | |
| Height | 1.57mm | |
| Width | 3.9 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Solder | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 4.9mm | ||
Standards/Approvals No | ||
Height 1.57mm | ||
Width 3.9 mm | ||
Automotive Standard No | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
相關連結
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi FDS Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi FDS Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC FDS4435BZ
- onsemi PowerTrench Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC