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MOSFETs
N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2
RS庫存編號:
875-2475P
製造零件編號:
MMIX1T600N04T2
製造商:
IXYS
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
74 現貨庫存,可於6工作日發貨。
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單價(不含稅) 個 (以每管裝提供)
TWD1,200.00
(不含稅)
TWD1,260.00
(含稅)
單位
每單位
5 - 9
TWD1,200.00
10 +
TWD1,182.00
包裝方式:
標準包裝
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RS庫存編號:
875-2475P
製造零件編號:
MMIX1T600N04T2
製造商:
IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
MMIX1T600N04T2, TrenchT2 GigaMOS Power MOSFET N-Channel 40V 600A SMPD
ESD Control Selection Guide V1
相容
符合聲明
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
屬性
值
Channel Type
N
Maximum Continuous Drain Current
600 A
Maximum Drain Source Voltage
40 V
Package Type
SMPD
Series
GigaMOS, HiperFET
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
25.25mm
Typical Gate Charge @ Vgs
590 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Width
23.25mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
5.7mm
Minimum Operating Temperature
-55 °C