Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-263 IRF5305STRLPBF

RS庫存編號:: 831-2834
製造零件編號:: IRF5305STRLPBF
製造商:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-263 IRF5305STRLPBF

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RS庫存編號:: 831-2834
製造零件編號:: IRF5305STRLPBF
製造商:: Infineon

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Power Dissipation Pd	110W
	Forward Voltage Vf	-1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.67mm
	Width	9.65 mm
	Height	4.83mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Power Dissipation Pd 110W
	Forward Voltage Vf -1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.67mm
	Width 9.65 mm
	Height 4.83mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305STRLPBF

This P-channel MOSFET is tailored for high-efficiency applications, delivering reliability and performance. It employs enhancement mode functionality, making it versatile for various electronic circuits. With robust specifications, it serves as a suitable option for automation and power management in electrical and mechanical environments.

Features & Benefits

• Maximum continuous drain current of 31A

• Maximum drain source voltage of 55V

• Surface mount configuration for seamless integration

• Maximum power dissipation capability of 110W for efficient operation

• Enhanced thermal performance with a maximum operating temperature of +175°C

• Low on-resistance of 60mΩ for improved efficiency

Applications

• For use with motor controls

• Suitable for power supply circuits

• Electronic switching

• Energy management solutions

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 4V, providing adequate control in circuit design.

How does the MOSFET handle heat?

It features a maximum power dissipation of 110W, enabling effective heat management in demanding applications.

Is this product compatible with surface mount designs?

Yes, it comes in a D2PAK package type designed specifically for surface mount applications.

What is the minimum operating temperature for functionality?

The device operates effectively at a minimum temperature of -55°C, ensuring versatility for various environments.

How does the on-resistance impact performance?

The low maximum drain source resistance of 60mΩ contributes to higher efficiency and performance in power delivery applications.