Infineon HEXFET N-Channel MOSFET, 7.3 A, 30 V, 8-Pin SOIC IRF7201TRPBF
- RS庫存編號:
- 826-8838
- 製造零件編號:
- IRF7201TRPBF
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 20 件）*
TWD314.00
(不含稅)
TWD329.60
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 20 | TWD15.70 | TWD314.00 |
| 40 - 180 | TWD15.30 | TWD306.00 |
| 200 - 380 | TWD15.00 | TWD300.00 |
| 400 - 780 | TWD14.60 | TWD292.00 |
| 800 + | TWD14.30 | TWD286.00 |
* 參考價格
- RS庫存編號:
- 826-8838
- 製造零件編號:
- IRF7201TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.3 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 50 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.5mm | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.3 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1.5mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 7.3A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7201TRPBF
This N-channel MOSFET is engineered for efficient switching in various applications. Featuring advanced HEXFET technology, it provides superior performance with low on-resistance and high power dissipation capabilities. With a continuous drain current of 7.3A and a drain-source voltage of 30V, this component is suitable for automation, electronics, and other technical environments where efficiency and reliability are essential.
Features & Benefits
• Low RDS(on) enhances energy efficiency
• Maximum power dissipation of 2.5W
• Gate threshold voltage of only 1V
• Designed for surface mount applications to optimise space
• Fast switching speed improves system responsiveness
• Maximum power dissipation of 2.5W
• Gate threshold voltage of only 1V
• Designed for surface mount applications to optimise space
• Fast switching speed improves system responsiveness
Applications
• Utilised in power management systems
• Suitable for motor control
• Commonly used in automotive switching elements
• Employed in power supply circuits
• Applicable in telecommunications equipment
• Suitable for motor control
• Commonly used in automotive switching elements
• Employed in power supply circuits
• Applicable in telecommunications equipment
How does the low RDS(on) benefit circuit efficiency?
The low RDS(on) reduces power losses through the device, boosting overall circuit efficiency and minimising heat generation.
What temperatures can this MOSFET operate within?
It operates effectively within a range of -55°C to +150°C, making it versatile for various environmental conditions.
What is the significance of the gate threshold voltage?
A low gate threshold voltage facilitates easier control of the MOSFET, enabling it to switch on with lower input signals and enhancing compatibility with diverse circuits.
Can this MOSFET handle pulsed currents?
Yes, it can manage pulsed drain currents up to 58A, suitable for applications requiring short bursts of power.
What manufacturing processes ensure its reliability?
Advanced processing techniques are implemented to achieve low on-resistance and robust device design, ensuring dependable performance in challenging applications.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.