ROHM N-Channel MOSFET, 1.5 A, 20 V, 3-Pin TUMT3 RUF015N02TL
- RS庫存編號:
- 826-7807
- 製造零件編號:
- RUF015N02TL
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 30 件）*
TWD327.00
(不含稅)
TWD343.20
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 30 - 30 | TWD10.90 | TWD327.00 |
| 60 - 120 | TWD10.60 | TWD318.00 |
| 150 - 270 | TWD10.40 | TWD312.00 |
| 300 - 570 | TWD10.10 | TWD303.00 |
| 600 + | TWD9.90 | TWD297.00 |
* 參考價格
- RS庫存編號:
- 826-7807
- 製造零件編號:
- RUF015N02TL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | TUMT3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 310 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 800 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Typical Gate Charge @ Vgs | 1.8 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 2mm | |
| Width | 1.7mm | |
| Height | 0.77mm | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type TUMT3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 310 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 800 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Typical Gate Charge @ Vgs 1.8 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 2mm | ||
Width 1.7mm | ||
Height 0.77mm | ||
- COO (Country of Origin):
- TH
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor