Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3

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包裝方式:
RS庫存編號:
818-1390
製造零件編號:
SI7288DP-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

15.6W

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Height

1.07mm

Standards/Approvals

No

Width

5 mm

Length

5.99mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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