onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 830 mA, 20 V Enhancement, 6-Pin SC-89 FDY1002PZ

RS庫存編號:: 807-0713
製造零件編號:: FDY1002PZ
製造商:: onsemi

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 830 mA, 20 V Enhancement, 6-Pin SC-89 FDY1002PZ

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 25 件）*

TWD362.50

(不含稅)

TWD380.50

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 1,425 個，準備發貨

單位	每單位	每包*
25 - 725	TWD14.50	TWD362.50
750 - 1475	TWD14.10	TWD352.50
1500 +	TWD13.90	TWD347.50

* 參考價格

RS庫存編號:: 807-0713
製造零件編號:: FDY1002PZ
製造商:: onsemi

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	830mA
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	SC-89
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	2.2nC
	Maximum Power Dissipation Pd	625mW
	Maximum Gate Source Voltage Vgs	8 V
	Forward Voltage Vf	-1V
	Minimum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Width	1.2 mm
	Standards/Approvals	No
	Length	1.7mm
	Height	0.6mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 830mA
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type SC-89
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 2.2nC
	Maximum Power Dissipation Pd 625mW
	Maximum Gate Source Voltage Vgs 8 V
	Forward Voltage Vf -1V
	Minimum Operating Temperature -55°C
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Width 1.2 mm
	Standards/Approvals No
	Length 1.7mm
	Height 0.6mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 830 mA, 20 V Enhancement, 6-Pin SC-89 FDY1002PZ

訂單超過 $1,300.00 免費送貨

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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