onsemi NDT Type N-Channel MOSFET, 2.8 A, 60 V Enhancement, 4-Pin SOT-223 NDT014L
- RS庫存編號:
- 806-1255
- 製造零件編號:
- NDT014L
- 製造商:
- onsemi
可享批量折扣
小計（1 包，共 20 件）*
TWD502.00
(不含稅)
TWD527.20
(含稅)
添加 60 件 件可免費送貨
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- 加上 3,960 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 980 | TWD25.10 | TWD502.00 |
| 1000 - 1980 | TWD24.50 | TWD490.00 |
| 2000 + | TWD24.20 | TWD484.00 |
* 參考價格
- RS庫存編號:
- 806-1255
- 製造零件編號:
- NDT014L
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | NDT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.85V | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 3.6nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.7mm | |
| Width | 3.7 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series NDT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.85V | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 3.6nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.7mm | ||
Width 3.7 mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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