製造零件編號

IXYS Polar3 Type N-Channel Power MOSFET, 98 A, 500 V Enhancement, 3-Pin TO-264

RS庫存編號:: 802-4414P
製造零件編號:: IXFK98N50P3
製造商:: IXYS

IXYS Polar3 Type N-Channel Power MOSFET, 98 A, 500 V Enhancement, 3-Pin TO-264

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計 7 件 (以管提供)*

TWD3,500.00

(不含稅)

TWD3,675.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年11月06日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位
7 - 12	TWD500.00
13 +	TWD490.00

* 參考價格

RS庫存編號:: 802-4414P
製造零件編號:: IXFK98N50P3
製造商:: IXYS

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	IXYS
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	98A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-264
	Series	Polar3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	50mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	197nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	130W
	Forward Voltage Vf	1.5V
	Maximum Operating Temperature	150°C
	Length	19.96mm
	Standards/Approvals	No
	Height	26.16mm
	Width	5.13 mm
	Automotive Standard	No

	選取全部
	品牌 IXYS
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 98A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-264
	Series Polar3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 50mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 197nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 130W
	Forward Voltage Vf 1.5V
	Maximum Operating Temperature 150°C
	Length 19.96mm
	Standards/Approvals No
	Height 26.16mm
	Width 5.13 mm
	Automotive Standard No

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of Advanced discrete Power MOSFET devices from IXYS