Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI9945BDY-T1-GE3

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RS 不再對此產品進貨。
包裝方式:
RS庫存編號:
787-8995
Distrelec 貨號:
304-02-278
製造零件編號:
SI9945BDY-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

72mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.1W

Maximum Gate Source Voltage Vgs

±20 V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Width

4 mm

Height

1.5mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

2

Distrelec Product Id

30402278

Automotive Standard

No

Dual N-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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