Renesas N-Channel MOSFET, 7 A, 160 V, 3-Pin SC-65 2SK1058-E
- RS庫存編號:
- 772-5286
- 製造零件編號:
- 2SK1058-E
- 製造商:
- Renesas Electronics
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- RS庫存編號:
- 772-5286
- 製造零件編號:
- 2SK1058-E
- 製造商:
- Renesas Electronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Renesas Electronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7 A | |
| Maximum Drain Source Voltage | 160 V | |
| Package Type | SC-65 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.45V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -15 V, +15 V | |
| Width | 4.8mm | |
| Number of Elements per Chip | 1 | |
| Length | 15.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 19.9mm | |
| 選取全部 | ||
|---|---|---|
品牌 Renesas Electronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 160 V | ||
Package Type SC-65 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.45V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -15 V, +15 V | ||
Width 4.8mm | ||
Number of Elements per Chip 1 | ||
Length 15.6mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 19.9mm | ||
N-Channel High Voltage MOSFETs 150V and Over, Renesas Electronics
MOSFET Transistors, Renesas Electronics (NEC)