Toshiba N-Channel MOSFET, 30 mA, 12.5 V Depletion, 4-Pin USQ 3SK294(TE85L,F)
- RS庫存編號:
- 756-0382
- 製造零件編號:
- 3SK294(TE85L,F)
- 製造商:
- Toshiba
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- RS庫存編號:
- 756-0382
- 製造零件編號:
- 3SK294(TE85L,F)
- 製造商:
- Toshiba
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 mA | |
| Maximum Drain Source Voltage | 12.5 V | |
| Package Type | USQ | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Channel Mode | Depletion | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 100 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Transistor Material | Si | |
| Width | 2mm | |
| Maximum Operating Temperature | +125 °C | |
| Length | 1.25mm | |
| Number of Elements per Chip | 1 | |
| Height | 0.95mm | |
| Typical Power Gain | 26 dB | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 mA | ||
Maximum Drain Source Voltage 12.5 V | ||
Package Type USQ | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 100 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Transistor Material Si | ||
Width 2mm | ||
Maximum Operating Temperature +125 °C | ||
Length 1.25mm | ||
Number of Elements per Chip 1 | ||
Height 0.95mm | ||
Typical Power Gain 26 dB | ||
- COO (Country of Origin):
- JP
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