N-Channel MOSFET, 34 A, 200 V, 3-Pin DPAK Infineon IPD320N20N3 G
- RS庫存編號:
- 754-5474
- 製造零件編號:
- IPD320N20N3 G
- 製造商:
- Infineon
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- RS庫存編號:
- 754-5474
- 製造零件編號:
- IPD320N20N3 G
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-252 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 32 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 136 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Height | 2.41mm | |
| Series | OptiMOS 3 | |
| Minimum Operating Temperature | -55 °C | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-252 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 32 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 136 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Height 2.41mm | ||
Series OptiMOS 3 | ||
Minimum Operating Temperature -55 °C | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.