Infineon SIPMOS N-Channel MOSFET, 90 mA, 600 V, 3-Pin SOT-89 BSS225H6327FTSA1

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包裝方式：
RS庫存編號:
752-8246
製造零件編號:
BSS225H6327FTSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-89

Series

SIPMOS

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

3.9 nC @ 10 V

Width

2.5mm

Maximum Operating Temperature

+150 °C

Length

4.5mm

Number of Elements per Chip

1

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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