onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000TA
- RS庫存編號:
- 739-0224
- 製造零件編號:
- 2N7000TA
- 製造商:
- onsemi
可享批量折扣
小計（1 包，共 10 件）*
TWD87.00
(不含稅)
TWD91.40
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD8.70 | TWD87.00 |
| 20 - 40 | TWD8.50 | TWD85.00 |
| 50 + | TWD8.10 | TWD81.00 |
* 參考價格
- RS庫存編號:
- 739-0224
- 製造零件編號:
- 2N7000TA
- 製造商:
- onsemi
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 400 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 5.2mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.19mm | |
| Height | 5.33mm | |
| Minimum Operating Temperature | -55 °C | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 5.2mm | ||
Maximum Operating Temperature +150 °C | ||
Width 4.19mm | ||
Height 5.33mm | ||
Minimum Operating Temperature -55 °C | ||
Advanced Power MOSFET, Fairchild Semiconductor
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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