Toshiba SSM3 N-Channel MOSFET, 180 mA, 20 V, 3-Pin VESM SSM3K35MFV(TPL3)
- RS庫存編號:
- 695-4789
- 製造零件編號:
- SSM3K35MFV(TPL3)
- 製造商:
- Toshiba
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD42.00
(不含稅)
TWD44.10
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 加上 10 件從 2026年1月05日 起發貨
- 最終 30 件從 2026年1月12日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 140 | TWD4.20 | TWD42.00 |
| 150 - 990 | TWD4.00 | TWD40.00 |
| 1000 + | TWD3.90 | TWD39.00 |
* 參考價格
- RS庫存編號:
- 695-4789
- 製造零件編號:
- SSM3K35MFV(TPL3)
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Series | SSM3 | |
| Package Type | VESM | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 150 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Width | 0.8mm | |
| Length | 1.2mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.5mm | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 mA | ||
Maximum Drain Source Voltage 20 V | ||
Series SSM3 | ||
Package Type VESM | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 150 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Width 0.8mm | ||
Length 1.2mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 0.5mm | ||
- COO (Country of Origin):
- JP