onsemi PowerTrench N-Channel MOSFET, 11 A, 30 V, 3-Pin TO-220AB FDP8880
- RS庫存編號:
- 671-4871
- 製造零件編號:
- FDP8880
- 製造商:
- onsemi
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- RS庫存編號:
- 671-4871
- 製造零件編號:
- FDP8880
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TO-220AB | |
| Series | PowerTrench | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 55 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Height | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 55 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Height 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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