onsemi NDT Type N-Channel MOSFET, 4 A, 60 V Enhancement, 4-Pin SOT-223 NDT3055L
- RS庫存編號:
- 671-1090
- Distrelec 貨號:
- 304-43-740
- 製造零件編號:
- NDT3055L
- 製造商:
- onsemi
可享批量折扣
小計（1 包，共 5 件）*
TWD161.00
(不含稅)
TWD169.05
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 140 件從 2026年2月23日 起發貨
- 加上 25,415 件從 2026年3月02日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 20 | TWD32.20 | TWD161.00 |
| 25 - 95 | TWD27.20 | TWD136.00 |
| 100 + | TWD26.20 | TWD131.00 |
* 參考價格
- RS庫存編號:
- 671-1090
- Distrelec 貨號:
- 304-43-740
- 製造零件編號:
- NDT3055L
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | NDT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 3W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Width | 3.56 mm | |
| Height | 1.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series NDT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 3W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Width 3.56 mm | ||
Height 1.6mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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