onsemi QFET N-Channel MOSFET, 32 A, 60 V, 3-Pin D2PAK FQB30N06LTM
- RS庫存編號:
- 671-0882
- 製造零件編號:
- FQB30N06LTM
- 製造商:
- onsemi
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RS 不再對此產品進貨。
- RS庫存編號:
- 671-0882
- 製造零件編號:
- FQB30N06LTM
- 製造商:
- onsemi
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 32 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK (TO-263) | |
| Series | QFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3.75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 9.65mm | |
| Typical Gate Charge @ Vgs | 15 nC @ 5 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 32 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Series QFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.65mm | ||
Typical Gate Charge @ Vgs 15 nC @ 5 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.