onsemi PowerTrench Type N-Channel MOSFET, 13 A, 30 V Enhancement, 8-Pin SOIC FDS6670A
- RS庫存編號:
- 671-0582
- 製造零件編號:
- FDS6670A
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD165.00
(不含稅)
TWD173.25
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 70 件準備從其他地點送貨
- 最終 2,910 件從 2026年1月12日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD33.00 | TWD165.00 |
| 625 + | TWD32.20 | TWD161.00 |
* 參考價格
- RS庫存編號:
- 671-0582
- 製造零件編號:
- FDS6670A
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Length 5mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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