Infineon HEXFET Type N-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-220AB IRLZ24NPBF
- RS庫存編號:
- 541-1231
- 製造零件編號:
- IRLZ24NPBF
- 製造商:
- Infineon
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TWD18.00
(不含稅)
TWD18.90
(含稅)
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單位 | 每單位 |
|---|---|
| 1 + | TWD18.00 |
* 參考價格
- RS庫存編號:
- 541-1231
- 製造零件編號:
- IRLZ24NPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 45W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.54mm | |
| Standards/Approvals | JEDEC TO-220AB, ANSI Y14.5M, 1982 | |
| Height | 8.77mm | |
| Width | 4.69 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 45W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.54mm | ||
Standards/Approvals JEDEC TO-220AB, ANSI Y14.5M, 1982 | ||
Height 8.77mm | ||
Width 4.69 mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRLZ24NPBF
This MOSFET is an essential component for various power applications, known for its efficient performance and robust specifications. Infineon's HEXFET technology ensures precision in electronic designs, making it a popular option in automation and mechanical industries. It effectively controls current flow in devices, significantly impacting modern electrical systems.
Features & Benefits
• Supports a maximum continuous drain current of 18A for high performance
• Operates under a maximum drain-source voltage of 55V for versatile applications
• Low gate threshold voltage minimises energy loss during operation
• Exhibits low drain-source resistance for enhanced efficiency
• Features enhancement mode capability for precise switching
• Can withstand temperatures up to +175°C for functionality under harsh conditions
Applications
• Utilised for power management in industrial automation systems
• Integrated into switching power supplies for optimal performance
• Employed in motor drive circuits for improved control
• Incorporated in various consumer electronics for dependable performance
What are the recommended gate-source voltages for proper operation?
The device can handle a maximum gate-source voltage of -16V to +16V, ensuring stable performance.
Can this component be used in high-temperature environments?
Yes, it operates effectively in temperatures ranging from -55°C to +175°C, suitable for diverse applications.
How does the low Rds(on) impact energy consumption?
A low drain-source resistance minimises power loss, enhancing overall efficiency and reducing heat generation during operation.
What considerations should be made during installation?
Proper attention should be given to the mounting type to ensure secure installation and adequate cooling to prevent overheating.
Is this component compatible with standard TO-220AB packages?
Yes, its design conforms to the TO-220AB standard, facilitating easy integration into existing systems.