Infineon BSZ12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin PG-TSDSON-8
- RS庫存編號:
- 273-5250
- 製造零件編號:
- BSZ12DN20NS3GATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD545.00
(不含稅)
TWD572.25
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 5 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD109.00 | TWD545.00 |
| 50 - 495 | TWD105.80 | TWD529.00 |
| 500 - 995 | TWD102.60 | TWD513.00 |
| 1000 - 2495 | TWD99.60 | TWD498.00 |
| 2500 + | TWD96.60 | TWD483.00 |
* 參考價格
- RS庫存編號:
- 273-5250
- 製造零件編號:
- BSZ12DN20NS3GATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.3A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | BSZ12DN20NS3 G | |
| Package Type | PG-TSDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 40mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC1 | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.3A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series BSZ12DN20NS3 G | ||
Package Type PG-TSDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 40mm | ||
Standards/Approvals IEC61249-2-21, JEDEC1 | ||
Height 1.5mm | ||
Width 40 mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and 150 degree Celsius operating temperature. It is a optimized for dc to dc conversion.
Halogen free
RoHS compliant
Pb free lead plating
Very low on resistance
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