Vishay SIS Type N-Channel MOSFET, 69.4 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS184LDN-T1-GE3

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RS庫存編號:
268-8341
製造零件編號:
SIS184LDN-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

69.4A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212-8

Series

SIS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0054Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

41nC

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

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