Vishay SIS Type N-Channel MOSFET, 69.4 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS184LDN-T1-GE3
- RS庫存編號:
- 268-8341
- 製造零件編號:
- SIS184LDN-T1-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 268-8341
- 製造零件編號:
- SIS184LDN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 69.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIS | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0054Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 52W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 69.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIS | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0054Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 52W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Very low figure of merit
ROHS compliant
UIS tested 100 percent