STMicroelectronics Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 261-4759
- 製造零件編號:
- STP65N150M9
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD4,785.00
(不含稅)
TWD5,024.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 50 件從 2026年1月26日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD95.70 | TWD4,785.00 |
| 100 - 100 | TWD92.80 | TWD4,640.00 |
| 150 + | TWD90.00 | TWD4,500.00 |
* 參考價格
- RS庫存編號:
- 261-4759
- 製造零件編號:
- STP65N150M9
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.4 mm | |
| Standards/Approvals | No | |
| Length | 28.9mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Operating Temperature 150°C | ||
Width 10.4 mm | ||
Standards/Approvals No | ||
Length 28.9mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
All features
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